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FDMC8032L
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 40V 7A 8-MLP
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Inventory: 6826
Minimum: 1
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 12W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N4
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.5 ns
Power - Max 1.9W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 1.2 ns
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 13 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 196mg
Transistor Element Material SILICON
Dimensions
Height 750μm
Length 3mm
Width 3mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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