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SI4946CDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-CHAN DUAL 60V SO-8
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Inventory: 5661
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.72485
≥1 USD $0.72485
≥10 USD $0.59565
≥100 USD $0.57665
≥500 USD $0.55765
≥1000 USD $0.5396
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Number of Channels 2
Power Dissipation 2W
Turn On Delay Time 8 ns
Power - Max 2W Ta 2.8W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 30V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta 6.1A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Drain to Source Resistance 33mOhm
Dimensions
Height 1.75mm
Compliance
RoHS Status ROHS3 Compliant
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
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