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FDS9958-F085
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 60V 2.9A 8-SOIC
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Inventory: 2790
Minimum: 1
Total Price: USD $113.91
Unit Price: USD $113.909796
≥1 USD $113.909796
≥10 USD $107.462072
≥100 USD $101.379314
≥500 USD $95.640863
≥1000 USD $90.227237
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
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