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SI4804CDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 30V 7.1A 8-Pin SOIC N T/R
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Inventory: 3660
Minimum: 1
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 1.2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4804
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 17 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 13 ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 7.1A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 2.4 V
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