Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.7A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7341PBF
Number of Elements 2
Row Spacing 6.3 mm
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 3.2 ns
Fall Time (Typ) 13 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.1A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 140 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 90 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1 V