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FDS6910

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 7.5A 8SOIC
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Inventory: 2583
Minimum: 1
Total Price: USD $2.98
Unit Price: USD $2.97584
≥1 USD $2.97584
≥10 USD $2.8074
≥100 USD $2.64849
≥500 USD $2.49857
≥1000 USD $2.35714
≥3000 USD $2.22372

Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 13MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 1.6W
Terminal Form GULL WING
Current Rating 7.5A
Number of Elements 2
Voltage 30V
Element Configuration Dual
Current 75A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 9 ns
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 5 ns
Fall Time (Typ) 5 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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