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SI4925DDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 8A 8-SOIC
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Inventory: 7104
Minimum: 1
Total Price: USD $0.7
Unit Price: USD $0.69825
≥1 USD $0.69825
≥10 USD $0.57285
≥100 USD $0.5548
≥500 USD $0.5377
≥1000 USD $0.51965
Technical Details
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 29mOhm
Max Power Dissipation 5W
Terminal Form GULL WING
Base Part Number SI4925
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -7.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Nominal Vgs -3 V
Supply Chain
Factory Lead Time 14 Weeks
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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