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FDS8928A
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC N T/R
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Inventory: 7778
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 30MOhm
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.5A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A 4A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time 23 ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 90 ns
Turn-Off Delay Time 260 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 670mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 670 mV
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
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