Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 15.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF8313PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.5m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 9.9 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 8.5 ns
Continuous Drain Current (ID) 9.7A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 46 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V