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DMP4025LSD-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 40V 6.9A 8SO
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Inventory: 8168
Minimum: 1
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMP4025LSD
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Turn On Delay Time 6.9 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 20V
Current - Continuous Drain (Id) @ 25°C 6.9A
Gate Charge (Qg) (Max) @ Vgs 33.7nC @ 10V
Rise Time 14.7 ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 30.9 ns
Turn-Off Delay Time 53.7 ns
Continuous Drain Current (ID) -7.6A
Threshold Voltage -1.3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage -40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.5mm
Length 4.95mm
Width 3.95mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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