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IRF7343TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 55V 8-SOIC
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Inventory: 6481
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.3571
≥1 USD $0.3571
≥10 USD $0.33689
≥100 USD $0.31782
≥500 USD $0.29983
≥1000 USD $0.28286
≥3000 USD $0.26685
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 4.7A
Base Part Number IRF7343PBF
Number of Elements 2
Row Spacing 6.3 mm
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.3 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.7A 3.4A
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 10 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 22 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Nominal Vgs 1 V
Dimensions
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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