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FDMA1032CZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-VDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V MICROFET 2X2
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Inventory: 6301
Minimum: 1
Total Price: USD $6.08
Unit Price: USD $6.08285
≥1 USD $6.08285
≥10 USD $4.9913
≥100 USD $4.8355
≥500 USD $4.6797
≥1000 USD $4.5239
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 68mOhm
Additional Feature ESD PROTECTION
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.4W
Current Rating 3.7A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Power - Max 700mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 68m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A 3.1A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 11 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1 V
Dimensions
Height 850μm
Length 2mm
Width 2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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