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IRF7103TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 50V 3A 8-SOIC
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Inventory: 1140
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.017815
≥1 USD $1.017815
≥10 USD $0.960201
≥100 USD $0.905851
≥500 USD $0.854578
≥1000 USD $0.80621
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Manufacturer Package Identifier IRF7103TRPBF
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 130mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 50V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 3A
Base Part Number IRF7103PBF
Number of Elements 2
Row Spacing 6.3 mm
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.1 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 8 ns
Fall Time (Typ) 25 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 50V
Dual Supply Voltage 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 100 ns
FET Feature Standard
Nominal Vgs 3 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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