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CSD85301Q2
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 6-WDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 5A 6WSON
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Inventory: 9205
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42523
≥1 USD $0.42523
≥10 USD $0.401165
≥100 USD $0.37846
≥500 USD $0.357029
≥1000 USD $0.336827
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 9.695537mg
Transistor Element Material SILICON
Dimensions
Height 800μm
Length 2mm
Width 2mm
Thickness 750μm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 2.3W
Terminal Form NO LEAD
Base Part Number CSD85301
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 469pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time 26 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.039Ohm
Avalanche Energy Rating (Eas) 3.8 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 5V Drive
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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