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FDC6401N
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 20V 3A 6-Pin SuperSOT T/R
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Inventory: 1740
Minimum: 1
Total Price: USD $8.66
Unit Price: USD $8.658065
≥1 USD $8.658065
≥10 USD $8.167987
≥100 USD $7.705649
≥500 USD $7.269473
≥1000 USD $6.858001
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 70MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 3A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 5 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 324pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Rise Time 7 ns
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Nominal Vgs 900 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Alternative Model
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