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DMN3018SSD-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A
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Inventory: 4809
Minimum: 1
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 1.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
Number of Elements 2
Number of Channels 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 697pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Rise Time 4.4 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 20.1 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.5mm
Length 4.95mm
Width 3.95mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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