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FDC6327C
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount
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Inventory: 71
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.722732
≥1 USD $0.722732
≥10 USD $0.681824
≥100 USD $0.643237
≥500 USD $0.606824
≥1000 USD $0.572479
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Dimensions
Height 1.1mm
Length 3mm
Width 1.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish TIN (SN)
Subcategory Other Transistors
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 2.7A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Power - Max 700mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A 1.9A
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Rise Time 14 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 1.9A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 900 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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