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IRF9389TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
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Inventory: 978
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.3629
≥1 USD $0.3629
≥10 USD $0.2983
≥100 USD $0.2888
≥500 USD $0.2793
≥1000 USD $0.2698
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF9389
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 398pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.8A 4.6A
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 14ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 15 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 34A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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