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DMN2400UV-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 1.33A SOT563
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Inventory: 6325
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 500mOhm
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Max Power Dissipation 530mW
Terminal Form FLAT
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 530mW
Turn On Delay Time 4.06 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Rise Time 7.28 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10.54 ns
Turn-Off Delay Time 13.74 ns
Continuous Drain Current (ID) 1.33A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 600μm
Length 1.7mm
Width 1.25mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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