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NTJD1155LT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 8V 1.3A SOT-363
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Inventory: 7255
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.17397
≥1 USD $0.17397
≥10 USD $0.16412
≥100 USD $0.15483
≥500 USD $0.14607
≥1000 USD $0.1378
≥3000 USD $0.13
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 130mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 400mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD1155
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Drain to Source Voltage (Vdss) 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 1.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 1V
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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