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IPG20N06S415AATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 8TDSON
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Pricing & Ordering
Inventory: 9543
Minimum: 1
Total Price: USD $12.08
Unit Price: USD $12.0821
≥1 USD $12.0821
≥10 USD $9.91325
≥100 USD $9.60355
≥500 USD $9.29385
≥1000 USD $8.98415
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 50W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 15.5m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0155Ohm
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Alternative Model
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