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NTJD4401NT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 0.63A SOT-363
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Inventory: 5883
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.1142
≥1 USD $0.1142
≥500 USD $0.08397
≥1000 USD $0.06998
≥2000 USD $0.0642
≥5000 USD $0.06
≥10000 USD $0.05581
≥15000 USD $0.05398
≥50000 USD $3.17522
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4401N
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
Turn On Delay Time 83 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 227 ns
Fall Time (Typ) 227 ns
Turn-Off Delay Time 786 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 920mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 920 mV
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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