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DMC2400UV-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V SOT563
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Inventory: 26780
Minimum: 5
Total Price: USD $0.24
Unit Price: USD $0.048301
≥5 USD $0.048301
≥2500 USD $0.035448
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Dimensions
Height 600μm
Length 1.7mm
Width 1.25mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form FLAT
Base Part Number DMC2400
Pin Count 6
Number of Elements 1
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 450mW
Turn On Delay Time 4.06 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 37.1pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.03A 700mA
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 13.74 ns
Continuous Drain Current (ID) 1.03A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Alternative Model
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