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SI4963BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 4.9A 8-SOIC
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Inventory: 6475
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 32mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4963
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 30 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 32m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 40 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.9A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

AOT8N80L
Alpha & Omega Semiconductor Inc.

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