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SI4559ADY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 60V 5.3A 8-SOIC
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Inventory: 2500
Minimum: 1
Total Price: USD $1.99
Unit Price: USD $1.986402
≥1 USD $1.986402
≥10 USD $1.873969
≥100 USD $1.767894
≥500 USD $1.667822
≥1000 USD $1.573422
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4559
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 30 ns
Power - Max 3.1W 3.4W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A 3.9A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 70 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 30 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 6.1 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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