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BSS84DW-7-F
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 50V 0.13A SC70-6
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Inventory: 6540
Minimum: 10
Total Price: USD $0.48
Unit Price: USD $0.04845
≥10 USD $0.04845
≥100 USD $0.0399
≥300 USD $0.03895
≥3000 USD $0.038
≥6000 USD $0.0361
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 10Ohm
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -130mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BSS84DW
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Drain to Source Voltage (Vdss) 50V
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 130mA
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.13A
Drain to Source Breakdown Voltage -50V
Dual Supply Voltage -50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.6 V
Min Breakdown Voltage 50V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
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