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FDMS7600AS

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V Dual N-Channel PowerTrench
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Inventory: 4293
Minimum: 1
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥10 USD $1.5884
≥100 USD $1.539
≥500 USD $1.4896
≥1000 USD $1.43925

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 211mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection SOURCE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 22A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 7.6 ns
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 700μm
Length 5mm
Width 6mm

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