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SI4816BDY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC
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Inventory: 6187
Minimum: 1
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series LITTLE FOOT?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18.5mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4816
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Power - Max 1W 1.25W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 18.5m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.8A 8.2A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 5.8A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 3 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.75mm
Length 5mm
Width 4mm
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