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CSD87313DMS
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
30V, N ch NexFET MOSFET?, dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150
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Inventory: 4731
Minimum: 1
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Form NO LEAD
Base Part Number CSD87313
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Avalanche Energy Rating (Eas) 67 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 200 pF
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Length 3.3mm
Width 3.3mm
Thickness 750μm
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