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SI4948BEY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 60V 2.4A 8-SOIC
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Inventory: 6199
Minimum: 1
Total Price: USD $4.83
Unit Price: USD $4.83265
≥1 USD $4.83265
≥10 USD $3.9653
≥100 USD $3.8418
≥500 USD $3.71735
≥1000 USD $3.59385
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 120MOhm
Terminal Finish MATTE TIN
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4948
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 120m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.4A
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) -2.4A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -3 V
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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