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FDMS7620S

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description DUAL N CH MOSFET, 30V, 22A, POWER56 - More Details
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Inventory: 9775
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.271353
≥1 USD $0.271353
≥10 USD $0.255989
≥100 USD $0.241506
≥500 USD $0.227836
≥1000 USD $0.214937

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 211mg
Transistor Element Material SILICON

Dimensions

Height 750╬╝m
Length 5mm
Width 6mm

Technical

Operating Temperature -55┬?C~150┬?C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench┬?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN SOURCE
Turn On Delay Time 6.6 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m ╬? @ 10.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Current - Continuous Drain (Id) @ 25┬?C 10.1A 12.4A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 1.8 ns
Fall Time (Typ) 1.5 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 12.4A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.0101A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 31 pF

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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