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BUK9K6R2-40E,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SOT-1205, 8-LFPAK56
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Mosfet Transistor, N Channel, 40 A, 40 V, 0.00484 Ohm, 10 V, 1.7 V Rohs Compliant: Yes
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Inventory: 9798
Minimum: 1
Total Price: USD $2.83
Unit Price: USD $2.828648
≥1 USD $2.828648
≥10 USD $2.66853
≥100 USD $2.517486
≥500 USD $2.374986
≥1000 USD $2.240549
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 68W
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3281pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35.4nC @ 10V
Rise Time 7.1ns
Fall Time (Typ) 19.8 ns
Turn-Off Delay Time 44.4 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 166 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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