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BC638

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 500mA 625mW 100MHz
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Inventory: 7465
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.357196
≥1 USD $0.357196
≥10 USD $0.33697
≥100 USD $0.317903
≥500 USD $0.299904
≥1000 USD $0.282925

Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 week ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Current Rating -1A
Frequency 100MHz
Base Part Number BC638
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1W
Power - Max 625mW
Gain Bandwidth Product 150MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
hFE Min 40

Alternative Model

No data

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