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MPS751G
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 75 @ 1A 2V 100nA ICBO 625mW 75MHz
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Inventory: 6929
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 75MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS751
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 75MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 5.334mm
Length 5.1816mm
Width 4.191mm
Alternative Model
No data
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