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MPS4124G
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 2mA 1V 50nA ICBO 625mW 170MHz
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Inventory: 3686
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.112271
≥1 USD $0.112271
≥10 USD $0.105916
≥100 USD $0.099921
≥500 USD $0.094267
≥1000 USD $0.088928
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 170MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS4124
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625W
Transistor Application AMPLIFIER
Gain Bandwidth Product 170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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