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MPS650ZL1

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 75 @ 1A 2V 100nA ICBO 625mW 75MHz
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Inventory: 5660
Minimum: 1
Total Price: USD $2.1
Unit Price: USD $2.0957
≥1 USD $2.0957
≥10 USD $1.7195
≥100 USD $1.66535
≥500 USD $1.61215
≥1000 USD $1.558

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MPS650
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 75MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

No data

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