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BD810
ON SemiconductorRoHS
/
Package TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 15 @ 4A 2V 10A 90W 1.5MHz
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Inventory: 7150
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.355663
≥1 USD $0.355663
≥10 USD $0.335524
≥100 USD $0.316532
≥500 USD $0.298616
≥1000 USD $0.281711
Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -10A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.1V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A 2V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 10A
Transition Frequency 1.5MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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