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Rochester Electronics, LLCRoHS
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Package /
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
PNP DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 3 BUILT IN BIAS RESISTANCE RATIO IS 0.06 Bipolar (BJT) Transistor 2A 100V
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Inventory: 9612
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥200 USD $0.551
≥500 USD $0.5339
≥1000 USD $0.5168
Technical Details
Physical
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.06
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Polarity/Channel Type PNP
JEDEC-95 Code TO-220AB
Collector Current-Max (IC) 2A
DC Current Gain-Min (hFE) 500
Collector-Emitter Voltage-Max 100V
Alternative Model
No data
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