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2SA1020RLRAG
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tape & Reel (TR) Through Hole PNP Single Bipolar (BJT) Transistor 70 @ 500mA 2V 1muA ICBO 900mW 100MHz
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Inventory: 9004
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.16625
≥1 USD $0.16625
≥500 USD $0.1368
≥1000 USD $0.13205
≥2000 USD $0.12825
≥5000 USD $0.1235
≥10000 USD $0.11115
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 900mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2SA1020
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
Dimensions
Height 7.87mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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