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2N5210TA
ON SemiconductorRoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Ammo
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Inventory: 7093
Minimum: 1
Total Price: USD $9.9
Unit Price: USD $9.897649
≥1 USD $9.897649
≥10 USD $9.337413
≥100 USD $8.80888
≥500 USD $8.310258
≥1000 USD $7.839867
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 100mA
Frequency 30MHz
Base Part Number 2N5210
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 4.5V
hFE Min 200
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
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