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BF423ZL1G
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 250V 0.5A TO-92
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Inventory: 4046
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.044423
≥1 USD $0.044423
≥500 USD $0.032664
≥1000 USD $0.027219
≥2000 USD $0.024969
≥5000 USD $0.023343
≥10000 USD $0.021717
≥15000 USD $0.021001
≥50000 USD $0.020648
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation 830mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -50mA
Frequency 60MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF423
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 830mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 250V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 250V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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