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BSS123NH6327XTSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS? Small Signal Mosfet - SOT-23
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Inventory: 2450
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.1102
≥1 USD $0.1102
≥10 USD $0.0912
≥100 USD $0.08835
≥500 USD $0.0855
≥1000 USD $0.08265
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 2.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 13μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Rise Time 3.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 7.4 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 6Ohm
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
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