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DMN2600UFB-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 3-UFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH DFN1006-3
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Inventory: 1839
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.1216
≥1 USD $0.1216
≥10 USD $0.09975
≥100 USD $0.0969
≥500 USD $0.0931
≥1000 USD $0.09025
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 2
Power Dissipation-Max 540mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 70.13pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 0.85nC @ 4.5V
Rise Time 11.5 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 20.9 ns
Turn-Off Delay Time 34.8 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 8V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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