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BSS84AKM,315
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SC-101, SOT-883
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET
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Inventory: 9351
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.06935
≥1 USD $0.06935
≥10 USD $0.057
≥100 USD $0.0551
≥500 USD $0.0532
≥1000 USD $0.05225
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 340mW Ta 2.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 340mW
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) -230mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -50V
Drain-source On Resistance-Max 8.5Ohm
Drain to Source Breakdown Voltage -50V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Dimensions
Height 500μm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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