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DMN67D8L-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 0.21A SOT23
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Pricing & Ordering
Inventory: 5080
Minimum: 10
Total Price: USD $0.82
Unit Price: USD $0.0817
≥10 USD $0.0817
≥100 USD $0.06745
≥300 USD $0.06555
≥3000 USD $0.06365
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 340mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.82nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 210mA
Drain Current-Max (Abs) (ID) 0.21A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 60V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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