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2N6426RLRA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 30000 @ 100mA 5V 500mA 625mW 125MHz
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Inventory: 1705
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.095351
≥1 USD $0.095351
≥10 USD $0.089953
≥100 USD $0.084861
≥500 USD $0.080058
≥1000 USD $0.075524

Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 4 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6426
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

No data

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