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2N5550RLRA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
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Inventory: 4803
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Total Price: USD $0.06
Unit Price: USD $0.063183
≥1 USD $0.063183
≥10 USD $0.059604
≥100 USD $0.056233
≥500 USD $0.053049
≥1000 USD $0.050044

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N5550
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 140V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 6V
hFE Min 60

Alternative Model

No data

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