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2N4403RLRM

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 2V -600mA 625mW 200MHz
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Inventory: 959
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.257143
≥1 USD $0.257143
≥10 USD $0.242588
≥100 USD $0.228859
≥500 USD $0.215902
≥1000 USD $0.203684

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -600mA
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N4403
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 750mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Turn Off Time-Max (toff) 255ns

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

No data

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