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2SD1863TV2Q
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 3-SIP
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 80V 1A ATV
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Inventory: 2141
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.050436
≥1 USD $0.050436
≥500 USD $0.037083
≥1000 USD $0.030906
≥2000 USD $0.028354
≥5000 USD $0.026494
≥10000 USD $0.024647
≥15000 USD $0.023842
≥50000 USD $0.023432
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SIP
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SD1863
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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