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2SA965-Y(F,M)
Toshiba Semiconductor and StorageRoHS
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Package TO-226-3, TO-92-3 Long Body
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Bipolar (BJT) Transistor 80 @ 100mA 5V 800mA 900mW 120MHz
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Inventory: 8313
Minimum: 1
Total Price: USD $8.9
Unit Price: USD $8.90435
≥1 USD $8.90435
≥10 USD $7.30645
≥100 USD $7.07845
≥500 USD $6.8495
≥1000 USD $6.6215
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package LSTM
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 120MHz
Alternative Model
No data
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